dvrn6056 document number: ds30556 rev. 5 - 2 1 of 5 www.diodes.com march 2010 ? diodes incorporated dvrn6056 voltage reference array features ? epitaxial planar die construction ? ideally suited for automated assembly processes ? lead free/rohs compliant version (notes 2 & 3) ? ?green? device (note 3) mechanical data ? case: sot-26 ? case material: molded plasti c, ?green? molding compound (note 3) ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: matte tin finish annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.008 grams (approximate) maximum ratings, npn tr ansistor element (q1) @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 600 ma maximum ratings, zener element (z1) @t a = 25c unless otherwise specified characteristic symbol value unit forward voltage @ i f = 10ma v f 0.9 v thermal characteristics characteristic symbol value unit power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. part mounted on fr-4 board with recommended pad layou t, which can be found on our websit e at http://www.diodes.com/da tasheets/ap02001.pdf. 2. no purposefully added lead. 3. product manufactured with date code wn (week 45, 2009) and newer are built with green molding compound and lead-free plating . product manufactured prior to date code wo are built with tin-lead plating, non-green molding compound and may contain halogens or sb 2 o 3 fire retardants. top view device schematic a 1 e 1 k 1 nc c 1 b 1 q1 z1
dvrn6056 document number: ds30556 rev. 5 - 2 2 of 5 www.diodes.com march 2010 ? diodes incorporated dvrn6056 electrical characteristics, np n transistor element (q1) @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v ( br ) cbo 60 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v ( br ) ceo 40 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo 6.0 ? v i e = 100 a, i c = 0 collector cutoff current i cex ? 100 na v ce = 35v, v eb ( off ) = 0.4v base cutoff current i bl ? 100 na v ce = 35v, v eb ( off ) = 0.4v on characteristics (note 4) dc current gain h fe 20 40 80 100 40 ? ? ? 300 ? ? i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 150ma, v ce = 1.0v i c = 500ma, v ce = 2.0v collector-emitter saturation voltage v ce(sat) ? 0.40 0.75 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.75 ? 0.95 1.2 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c cb ? 6.5 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c eb ? 30 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 15 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 8.0 x 10 -4 small signal current gain h fe 40 500 ? output admittance h oe 1.0 30 s current gain-bandwidth product f t 250 ? mhz v ce = 10v, i c = 20ma, f = 100mhz switching characteristics delay time t d ? 15 ns v cc = 30v, i c = 150ma, v be(off) = 2.0v, i b1 = 15ma rise time t r ? 20 ns storage time t s ? 225 ns v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma fall time t f ? 30 ns electrical characteristics, zener element (z1) @t a = 25c unless otherwise specified zener voltage range (note 4) maximum zener impedance maximum reverse leakage current (note 4) v z @ i zt i zt z zt @ i zt z z k @ i zk = 0.5ma i r @ v r nom (v) min (v) max (v) ma a v 5.6 5.49 5.73 5 60 200 1.0 2.5 notes: 4. short duration pulse test used to minimize self-heating effect. npn transistor section (q1) 0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature (total device) a 150 200 250 300 350 0 400 1 10 1,000 100 0.1 1 10 1,000 100 h, d c c u r r en t g ain fe i , collector current (ma) fig. 2 typical dc current gain vs. collector current c t = -25c a t = +25c a t = 125c a v = 1.0v ce
dvrn6056 document number: ds30556 rev. 5 - 2 3 of 5 www.diodes.com march 2010 ? diodes incorporated dvrn6056 npn transistor section (q1) 1.0 5.0 20 10 30 0.1 10 1.0 50 c a p a c i t a n c e (pf) v, capacitance characteristics r reverse voltage (v) fig. 3 typical c obo c ibo f = 1mhz 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i , base current (ma) fig. 4 typical collector saturation region b v, c o lle c t o r -emi t t e r v o l t a g e (v) ce i = 1ma c i = 10ma c i = 30ma c i = 100ma c i = 300ma c 1 10 100 1,000 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 5 typical collector-emitter saturation voltage vs. collector current c t = 25c a t = -50c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 i i c b = 10 1 0.1 10 100 v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) i , collector current (ma) fig. 6 typical base-emitter turn-on voltage vs. collector current c 0.2 0.3 0.4 0.6 0.5 0.8 0.7 1.0 0.9 v = 5v ce t = 25c a t = -50c a t = 150c a 1 10 100 1,000 11 01 0 0 i , collector current (ma) fig. 7 typical gain-bandwidth product vs. collector current c f, g ai n -ba n dwid t h p r o d u c t (m h z) t v = 5v ce
dvrn6056 document number: ds30556 rev. 5 - 2 4 of 5 www.diodes.com march 2010 ? diodes incorporated dvrn6056 zener section (z1) 0 0.2 0.4 0.6 0.8 1.2 1.0 i, i n s t a n t a n e o u s f o r wa r d c u r r e n t (ma) f v , instantaneous forward voltage (v) fig. 8 typical forward characteristics f 100 10 1.0 0.1 0.01 1,000 ordering information (note 5) part number case packaging DVRN6056-7-F sot-26 3000/tape & reel notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 code p r s t u v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions sot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d ? ? 0.95 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 ? all dimensions in mm a h1 = product type marking code ym = date code marking y = year (ex: p = 2003) m = month (ex: 9 = september) ah1 ym a m j l d b c h k
dvrn6056 document number: ds30556 rev. 5 - 2 5 of 5 www.diodes.com march 2010 ? diodes incorporated dvrn6056 suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com dimensions value (in mm) z 3.20 g 1.60 x 0.55 y 0.80 c1 2.40 c2 0.95 x z y c1 c2 c2 g
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